200mm Semi/Fully-Automated on-wafer Power Device Characterization System
- Designed specifically for IGBT/power MOSFET (GaN, SiC, Si) device measurements at the wafer level, the new TESLA200 on-wafer power semiconductor probing system is engineered to provide accurate data up to 3 kV (triaxial) / 10 kV (coaxial) and 200 A (standard) / 600 A (high current)
- Applications : High Power